Note:
(1) Please use A4 size papers.
(2) The lab report should be submitted online individually.
(3) Use Proteus 8.10 for simulation before the lab session. In the Proteus library, you should be able to find all the components used in the schematics. The lab report must include both the simulation and measurement results.
1. [Common-Emitter Amplifier]
- (a) Β [40%] Design and build a common-emitter amplifier in Proteus and
on the breadboard which has a voltage gain AΟ > 10, using npn BJT 2N3904. Plot VOUT vs VIN . (Hint: First choose an appropriate RC . Second, perform DC sweep to find out a VIN at which the magnitude of slope is more than 10. At the same time, make sure the BJT is in the forward-active region. If not working, change for another RC and repeat the DC sweep analysis again.)
- (b) Β [30%] For Vin = VIN + 0.01sin(2Ο102 β time) , plot Vout = VOUT + Ο
out vs time. Confirm that the amplitude of Ο
out is equal to 0.01 Γ
AΟ .
(c) [30%] For Vin = VIN + 0.01sin(2Ο107 β time) , plot Vout = VOUT +
Ο out vs time. Is the amplitude of Ο out still equal to 0.01 Γ AΟ ? If not, explain the possible reasons.
1
2
2N3903, 2N3904
General Purpose Transistors
NPN Silicon Features
β’ PbβFree Packages are Available* MAXIMUM RATINGS
Rating
CollectorβEmitter Voltage CollectorβBase Voltage EmitterβBase Voltage Collector Current β Continuous
Total Device Dissipation @ TA = 25Β°C
Derate above 25Β°C Total Device Dissipation
@ TC = 25Β°C Derate above 25Β°C
Operating and Storage Junction Temperature Range
http://onsemi.com
Symbol
VCEO VCBO VEBO IC
PD
PD TJ, Tstg
Value Unit
40 Vdc 60 Vdc 6.0 Vdc 200 mAdc
625 mW
2 BASE
COLLECTOR 3
1 EMITTER
5.0
1.5 W
TOβ92 CASE 29 STYLE 1
mW/Β°C mW/Β°C
Β°C
12
β55 to +150
1 2
3
1 2
3
BENT LEAD TAPE & REEL AMMO PACK
THERMAL CHARACTERISTICS (Note 1)
STRAIGHT LEAD BULK PACK
Characteristic
Thermal Resistance, JunctionβtoβAmbient
Thermal Resistance, JunctionβtoβCase
Symbol
RqJA RqJC
Max Unit
200 Β°C/W
83.3
Β°C/W
MARKING DIAGRAMS
x = 3 or 4
Y = Year
WW = Work Week
G = PbβFree Package
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. IndicatesDatainadditiontoJEDECRequirements.
|
2N 390x YWWG G |
*For additional information on our PbβFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
Publication Order Number:
2N3903/D
ELECTRICAL CHARACTERISTICS (TA = 25Β°C unless otherwise noted)
Characteristic Symbol
OFF CHARACTERISTICS
Collector β Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO CollectorβBase Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO EmitterβBase Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX
ON CHARACTERISTICS
CollectorβEmitter Saturation Voltage (Note 2) VCE(sat) (IC =10mAdc,IB =1.0mAdc)
(IC =50mAdc,IB =5.0mAdc
BaseβEmitter Saturation Voltage (Note 2) VBE(sat) (IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALLβSIGNAL CHARACTERISTICS
CurrentβGain β Bandwidth Product fT (IC =10mAdc,VCE =20Vdc,f=100MHz) 2N3903
2N3904
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo
Input Impedance hie (IC =1.0mAdc,VCE =10Vdc,f=1.0kHz) 2N3903
2N3904
Voltage Feedback Ratio hre (IC =1.0mAdc,VCE =10Vdc,f=1.0kHz) 2N3903
2N3904
SmallβSignal Current Gain hfe (IC =1.0mAdc,VCE =10Vdc,f=1.0kHz) 2N3903
2N3904
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe
Min Max
40 β 60 β 6.0 β
β 50 β 50
Unit
Vdc Vdc Vdc nAdc nAdc
2N3903, 2N3904
|
DC Current Gain (Note 2) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 |
hFE |
20 40 35 70 50 100 30 60 15 30 |
β β β β 150 300 β β β β |
β |
β 0.2 β 0.3
Vdc β 0.95
Vdc
0.65 0.85
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
NF 2N3903
250 β 300 β
β 4.0 β 8.0
1.0 8.0 1.0 10
0.1 5.0 0.5 8.0
50 200 100 400
1.0 40
β 6.0 β 5.0
β 35
β 35
β 175 β 200
β 50
MHz
pF pF kW
X 10β4
β
mmhos dB
ns ns ns
ns
2N3904
Delay Time Rise Time Storage Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc)
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
td
tr
2N3903 ts 2N3904
Fall Time
2. PulseTest:PulseWidthv300ms;DutyCyclev2%.
tf
http://onsemi.com 2
ORDERING INFORMATION Device
2N3903RLRM 2N3904 2N3904G
2N3904RLRA 2N3904RLRAG
2N3904RLRM 2N3904RLRMG
2N3904RLRP 2N3904RLRPG
2N3904RL1G
2N3904ZL1 2N3904ZL1G
Package
TOβ92
TOβ92
TOβ92 (PbβFree)
TOβ92
TOβ92 (PbβFree)
TOβ92
TOβ92 (PbβFree)
TOβ92
TOβ92 (PbβFree)
TOβ92 (PbβFree)
TOβ92
TOβ92 (PbβFree)
Shippingβ 2000 / Ammo Pack 5000 Units / Bulk 5000 Units / Bulk
2000 / Tape & Reel 2000 / Tape & Reel
2000 / Ammo Pack 2000 / Ammo Pack
2000 / Ammo Pack 2000 / Ammo Pack
2000 / Tape & Reel
2000 / Ammo Pack 2000 / Ammo Pack
to our Tape and Reel Packaging
2N3903, 2N3904
β For information on tape and reel specifications, including part orientation and tape sizes, please refer Specifications Brochure, BRD8011/D.
+3V
275
CS < 4 pF*
DUTY CYCLE = 2% 300 ns
-0.5V
Figure 1. Delay and Rise Time Equivalent Test Circuit
+10.9 V
10k
< 1 ns
10 < t1 < 500 ms t1 DUTY CYCLE = 2%
0
+10.9 V
+3V
275
* Total shunt capacitance of test jig and connectors
10k 1N916
CS < 4 pF*
-9.1Vβ²
* Total shunt capacitance of test jig and connectors
<1ns
Figure 2. Storage and Fall Time Equivalent Test Circuit
http://onsemi.com 3
10 7.0 5.0
3.0 2.0
1.0 0.1
500
300 200
100 70 50
30 20
10
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25Β°C TJ = 125Β°C
5000
3000 2000
1000 700 500
300 200
100 70 50
500
300 200
100 70 50
30 20
10
T
2N3903, 2N3904
VCC =40V IC/IB = 10
Q
QA
Cibo
C
0.2 0.3
0.5 0.7 1.0
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
20 30
50 70 100 200
obo
2.0 3.0
5.0 7.0 10
1.0
20 30 40
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
IC/IB = 10
tr @ VCC = 3.0 V
2.0 V
40V
15V
td @ VOB = 0 V
|
VCC =40V IC/IB = 10 |
|||||||||||||||||||
500
300 200
100 70 50
30 20
10
500
300 200
100 70 50
30 20
10
77 55
1.0
2.0
3.0
5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mA)
Figure 5. TurnβOn Time
70 100 200
1.0
2.0 3.0
5.0 7.0 10
20 30 50
70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 6. Rise Time
|
tβ²s = ts – 1/8 tf IB1 = IB2 |
||||||||||||||||||
|
IC/IB = 20 |
IC/IB = 10 |
|||||||||||||||||
|
IC/IB = 20 |
||||||||||||||||||
|
IC/IB = 10 |
||||||||||||||||||
IC/IB = 20
VCC =40V IB1 = IB2
IC/IB = 10
77 55
70 100 200
1.0 2.0 3.0 5.0 7.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
70 100 200
1.0
2.0 3.0
5.0 7.0 10
20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
http://onsemi.com 4
tsβ², STORAGE TIME (ns) TIME (ns) CAPACITANCE (pF)
t f, FALL TIME (ns) t r, RISE TIME (ns)
Q, CHARGE (pC)
TYPICAL AUDIO SMALLβSIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25Β°C, Bandwidth = 1.0 Hz)
12 14
12 10 8 6 4 2 00
2N3903, 2N3904
|
SOURCE RESISTANCE = 200 W IC = 1.0 mA |
|||||||||||||||||||
|
SOURCE RESISTANCE = 200 W IC = 0.5 mA |
|||||||||||||||||||
|
SOURCE RESISTANCE = 1.0 k IC =50mA |
|||||||||||||||||||
|
SOURCE RESISTANCE = 500 W IC = 100 mA |
|||||||||||||||||||
f=1.0kHz
IC = 0.5 mA
IC = 1.0 mA
IC =50mA
IC = 100 mA
10 8 6 4 2
0.1 0.2 0.4
300
200
100 70
50
30
1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz)
Figure 9.
(VCE
10 20 40 100 RS, SOURCE RESISTANCE (k OHMS)
Figure 10.
h PARAMETERS
= 10 Vdc, f = 1.0 kHz, TA = 25Β°C) 100
0.1 0.2 0.4
1.0 2.0 4.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
50
20 10 5
2 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA)
Figure 12. Output Admittance
20 10
10 5.0
2.0 1.0 0.5
7.0 5.0
3.0 2.0
1.0
0.7
0.2 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
Figure 13. Input Impedance
http://onsemi.com 5
h ie , INPUT IMPEDANCE (k OHMS) hfe , CURRENT GAIN NF, NOISE FIGURE (dB)
hre,VOLTAGEFEEDBACKRATIO(X10-4) hoe,OUTPUTADMITTANCE(mmhos) NF,NOISEFIGURE(dB)
2.0
1.0 0.7 0.5
0.3 0.2
0.1
0.1 0.2 0.3
1.0 0.8 0.6 0.4 0.2
25Β°C
2N3903, 2N3904
TYPICAL STATIC CHARACTERISTICS
TJ = +125Β°C
+
– 55Β°C
VCE = 1.0 V
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
20 30
50 70 100 200
5.0 7.0 10 Figure 15. DC Current Gain
|
TJ = 25Β°C |
|||||||||||||||||||||||||||||
|
IC = 1.0 mA |
10 mA |
30 mA |
100 mA |
||||||||||||||||||||||||||
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.2 1.0 0.8 0.6 0.4 0.2
0
1.0 2.0
50 100 200 IC, COLLECTOR CURRENT (mA)
Figure 17. βONβ Voltages
1.0 0.5 0
- – Β 0.5
- – Β 1.0
- – Β 1.5 -2.0
0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
qVC FOR VCE(sat)
+25Β°C TO +125Β°C
– 55Β°C TO +25Β°C
– 55Β°C TO +25Β°C
+25Β°C TO +125Β°C
qVB FOR VBE(sat)
TJ = 25Β°C
VBE(sat) @ IC/IB =10
VBE @ VCE =1.0 V
VCE(sat) @ IC/IB =10
5.0 10 20
http://onsemi.com 6
V, VOLTAGE (VOLTS) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) h FE, DC CURRENT GAIN (NORMALIZED)
COEFFICIENT (mV/Β°C)
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SCALE 1:1
12 12 33
TOβ92 (TOβ226) 1 WATT
CASE 29β10 ISSUE A
DATE 08 MAY 2012
STRAIGHT LEAD
R F
A
BENT LEAD
B P
L
K
STRAIGHT LEAD
NOTES:
1.
2. 3.
4.
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994.
CONTROLLING DIMENSION: INCHES.
CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIΒ MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM.
|
A 0.175 |
0.205 |
4.44 |
|
B 0.290 |
0.310 |
7.37 |
|
C 0.125 |
0.165 |
3.18 |
|
D 0.018 |
0.021 |
0.46 |
|
F 0.016 |
0.019 |
0.41 |
|
G 0.045 |
0.055 |
1.15 |
|
H 0.095 |
0.105 |
2.42 |
|
J 0.018 |
0.024 |
0.46 |
|
K 0.500 |
— |
12.70 |
|
L 0.250 |
— |
6.35 |
|
N 0.080 |
0.105 |
2.04 |
|
P — |
0.100 |
— |
|
R 0.135 |
— |
3.43 |
D HJ
INCHES DIM MIN MAX
V 0.135 —
MILLIMETERS MIN MAX 5.21
7.87 4.19 0.53 0.48 1.39 2.66 0.61 — — 2.66 2.54 —
3.43 —
XXG V
C
1
N N
SECTION XβX
BENT LEAD
D
A R
P T
SEATING PLANE
GXX
1
NOTES:
B
K
1.
2. 3.
4.
DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
CONTROLLING DIMENSION: INCHES.
CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM.
INCHES
MILLIMETERS MIN MAX 5.21
7.87 4.19 0.53 2.80 0.61
DIM
MIN
MAX
|
A 0.175 |
0.205 |
4.44 |
|
B 0.290 |
0.310 |
7.37 |
|
C 0.125 |
0.165 |
3.18 |
|
D 0.018 |
0.021 |
0.46 |
|
G 0.094 |
0.102 |
2.40 |
|
J 0.018 |
0.024 |
0.46 |
|
K 0.500 |
— |
12.70 |
|
N 0.080 |
0.105 |
2.04 |
|
P — |
0.100 |
— |
|
R 0.135 |
— |
3.43 |
J
VC — 2.66
N
SECTION XβX
STYLES ON PAGE 2
V
0.135
2.54 — — 3.43 —
|
DOCUMENT NUMBER: |
Electronic versions are uncontrolled except when accessed directly from the Document Repository. 98AON52857E Printed versions are uncontrolled except when stamped βCONTROLLED COPYβ in red. |
|
DESCRIPTION: |
TOβ92 (TOβ226) 1 WATT PAGE 1 OF 2 |
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
Β© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
STYLE 1: PIN 1.
STYLE 2:
PIN 1. BASE
- EMITTER
- COLLECTOR
STYLE 7:
PIN 1. SOURCE
- DRAIN
- GATE
STYLE 12:
PIN 1. MAIN TERMINAL 1
- GATE
- MAIN TERMINAL 2
STYLE 17:
PIN 1. COLLECTOR
- BASE
- EMITTER
STYLE 22:
PIN 1. SOURCE
- GATE
- DRAIN
STYLE 27: PIN 1. MT
- SUBSTRATE
- MT
STYLE 4:
PIN 1. CATHODE
- CATHODE
- ANODE
STYLE 9:
PIN 1. BASE 1
- EMITTER
- BASE 2
STYLE 14:
PIN 1. EMITTER
- COLLECTOR
- BASE
STYLE 19:
PIN 1. GATE
- ANODE
- CATHODE
STYLE 24:
PIN 1. EMITTER
- COLLECTOR/ANODE
- CATHODE
STYLE 29:
PIN 1. NOT CONNECTED
- ANODE
- CATHODE
PIN
1. DRAIN 2. SOURCE 3. GATE
STYLE 11: PIN 1.
STYLE 15:
STYLE 16: PIN 1.
STYLE 20:
EMITTER 2. BASE
3. COLLECTOR STYLE 6:
STYLE 10:
PIN 1.
- SOURCE & SUBSTRATE
- DRAIN
PIN
1. CATHODE 2. GATE
3. ANODE
GATE
ANODE
- CATHODE & ANODE
- CATHODE
PIN
1. ANODE 1 2. CATHODE 3. ANODE 2
ANODE 2. GATE
PIN
1. NOT CONNECTED 2. CATHODE
3. ANODE
3. CATHODE STYLE 21:
STYLE 25:
PIN 1.
2. EMITTER
PIN
1. MT1 2. GATE 3. MT2
STYLE 26: PIN 1.
STYLE 30:
COLLECTOR 3. BASE
VCC
2. GROUND 2
PIN
1. DRAIN 2. GATE
3. SOURCE
3. OUTPUT STYLE 31:
PIN 1.
STYLE 33: BASE PIN 1. COLLECTOR 2. EMITTER 3.
STYLE 34: RETURN PIN 1. INPUT 2. OUTPUT 3.
STYLE 35:
STYLE 32: GATE PIN 1.
- DRAIN 2.
- SOURCE 3.
INPUT PIN GROUND
LOGIC
1. GATE
2. COLLECTOR 3. EMITTER
TOβ92 (TOβ226) 1 WATT
CASE 29β10 ISSUE A
STYLE 3:
PIN 1. ANODE
- ANODE
- CATHODE
STYLE 8:
PIN 1. DRAIN
- GATE
- SOURCE & SUBSTRATE
STYLE 13:
PIN 1. ANODE 1
- GATE
- CATHODE 2
STYLE 18:
PIN 1. ANODE
- CATHODE
- NOT CONNECTED
STYLE 23:
PIN 1. GATE
- SOURCE
- DRAIN
STYLE 28:
PIN 1. CATHODE
- ANODE
- GATE
DATE 08 MAY 2012
STYLE 5:
|
DOCUMENT NUMBER: |
Electronic versions are uncontrolled except when accessed directly from the Document Repository. 98AON52857E Printed versions are uncontrolled except when stamped βCONTROLLED COPYβ in red. |
|
DESCRIPTION: |
TOβ92 (TOβ226) 1 WATT PAGE 2 OF 2 |
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductorβs product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentβMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. βTypicalβ parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including βTypicalsβ must be validated for each customer application by customerβs technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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