- Draw the C-V curves of a MOS capacitor with n-type Si as the substrate, at low frequency and high frequency, respectively. Explain why they are different.
- Consider an n+ polysilicon gate on silicon dioxide with a p-type silicon substrate doped to Na = 3 Γ 1016 cm-3. Assume Qssβ = 5 Γ 1010 cm-2. Determine the required oxide thickness such that the threshold voltage is VTN =+0.65 V. Please provide the process of derivation.
[SOLVED] VE320-Quiz 8
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