Name: VE320 Homework 3 Solved
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[SOLVED] VE320 Homework 3

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(a) For silicon, find the ratio of the density of states in the conduction band at 𝐸=𝐸𝑐+𝑘𝑇 to the density of states in the valence band at 𝐸=𝐸𝑣−𝑘𝑇. (b) Repeat part (a) for GaAs.
(a) The Fermi energy in silicon is 0.30𝑒𝑉 below the conduction band energy 𝐸_𝑐 at 𝑇=300𝐾. Plot the probability of a state being occupied by an electron in the conduction band over the range 𝐸_𝑐≤𝐸≤𝐸_𝑐+2𝑘𝑇. (b) The Fermi energy in silicon is 0.25𝑒𝑉 above the valence band energy 𝐸_𝑣. Plot the probability of a state being empty by an electron in the valence band over the range 𝐸_𝑣−2𝑘𝑇≤𝐸≤𝐸_𝑣.
(a) Calculate the temperature at which there is a 10⁻⁸ probability that an energy state 0.60𝑒𝑉 above the Fermi energy level is occupied by an electron. (b) Repeat part (a) for a probability of 10⁻⁶.